= 13.5m鈩?/div>
I
D
= 51A
Description
Specifically designed for Automotive applications,
this HEXFET
廬
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRLZ44Z
D
2
Pak
IRLZ44ZS
Max.
51
36
204
80
0.53
鹵 16
78
110
See Fig.12a, 12b, 15, 16
-55 to + 175
TO-262
IRLZ44ZL
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聶
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
d
脙聶
h
g
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
i
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
k
Parameter
Typ.
Max.
1.87
鈥撯€撯€?/div>
62
40
Units
擄C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
ik
ik
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount)
jk
www.irf.com
1
3/2/04
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