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IRLZ44Z Datasheet

  • IRLZ44Z

  • AUTOMOTIVE MOSFET

  • 12頁(yè)

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 95849
AUTOMOTIVE MOSFET
IRLZ44Z
IRLZ44ZS
IRLZ44ZL
HEXFET
廬
Power MOSFET
D
Features
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Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
G
S
R
DS(on)
= 13.5m鈩?/div>
I
D
= 51A
Description
Specifically designed for Automotive applications,
this HEXFET
廬
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175擄C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRLZ44Z
D
2
Pak
IRLZ44ZS
Max.
51
36
204
80
0.53
鹵 16
78
110
See Fig.12a, 12b, 15, 16
-55 to + 175
TO-262
IRLZ44ZL
Units
A
W
W/擄C
V
mJ
A
mJ
擄C
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聶
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
d
脙聶
h
g
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
i
300 (1.6mm from case )
10 lbf in (1.1N m)
y
y
k
Parameter
Typ.
Max.
1.87
鈥撯€撯€?/div>
62
40
Units
擄C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
ik
ik
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount)
jk
www.irf.com
1
3/2/04

IRLZ44Z 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 55V

  • 51A

  • 13.5 毫歐 @ 31A，10V

  • 3V @ 250µA

  • 36nC @ 5V

  • 1620pF @ 25V

  • 80W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • *IRLZ44Z

IRLZ44Z相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) |...
    ETC
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | ...
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    HEXFET POWER MOSFET
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  • 英文版
    HEXFET? Power MOSFET
  • 英文版
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  • 英文版
    HEXFET POWER MOSFET
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  • 英文版
    N-channel enhancement mode Logic level TrenchMOS transistor
    PHILIPS
  • 英文版
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    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG
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    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG [S...
  • 英文版
    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)
    IRF
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    HEXFET POWER MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF

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