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IRLW630A Datasheet

  • IRLW630A

  • ADVANCED POWER MOSFET

  • 7頁(yè)

  • FAIRCHILD

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上傳產(chǎn)品規(guī)格書

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$GYDQFHG 3RZHU 026)(7
FEATURES
鈾?/div>
Avalanche Rugged Technology
鈾?/div>
Rugged Gate Oxide Technology
鈾?/div>
Lower Input Capacitance
鈾?/div>
Improved Gate Charge
鈾?/div>
Extended Safe Operating Area
鈾?/div>
150擄C Operating Temperature
鈾?/div>
Lower Leakage Current: 10碌A(chǔ) (Max.) @ V
DS
= 200V
鈾?/div>
Lower R
DS(ON)
: 0.335鈩?(Typ.)
IRLW/I630A
BV
DSS
= 200 V
R
DS(on)
= 0.4鈩?/div>
I
D
= 9 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25擄C)
Continuous Drain Current (T
C
=100擄C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25擄C) *
Total Power Dissipation (T
C
=25擄C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(2)
(1)
(1)
(3)
(1)
Value
200
9
5.7
32
鹵20
54
9
6.9
5
3.1
69
0.55
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
R
胃JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
1.81
40
62.5
擄C/W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
漏1999 Fairchild Semiconductor Corporation
1

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