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IRLM210 Datasheet

  • IRLM210

  • Advanced Power MOSFET

  • 7頁(yè)

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
n
Avalanche Rugged Technology
n
Rugged Gate Oxide Technology
n
Lower Input Capacitance
n
Improved Gate Charge
n
Extended Safe Operating Area
n
Lower Leakage Current : 10
碌A(chǔ)
(Max.) @ V
DS
= 200V
n
Lower R
DS(ON)
: 1.185
鈩?/div>
(Typ.)
IRLM210A
BV
DSS
= 200 V
R
DS(on)
= 1.5
鈩?/div>
I
D
= 0.77 A
SOT-223
2
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25 C)
Continuous Drain Current (T
A
=70 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
o
Total Power Dissipation (T
A
=25 C) *
Linear Derating Factor *
o
o
Value
200
0.77
0.62
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
6.1
鹵20
27
0.77
0.18
5.0
1.8
0.014
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ C
o
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8錛?from case for 5-seconds
o
C
300
Thermal Resistance
Symbol
R
胃JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
69.4
Units
o
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. A

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