Provisional Data Sheet No. PD-9.1614
鈩?/div>
, HEXFET
The Logic Level 鈥楲鈥?series of power MOSFETs are
designed to be operated with level logic gate-to-
source voltage of 5V. In addition to the well es-
tablished characteristics of HEXFETs, they have
the added advantage of providing low drive re-
quirements to interface power loads to logic level
IC鈥檚 and microprocessors.
Fields of application include: high speed power
applications such as switching regulators, switch-
ing converters, motor drivers, solenoid and re-
lay drivers.
The HEXFET technology is the key to International
Rectifier 鈥檚 advance line of logic level power
MOSFET transistors. The efficient geometry and
unique processing of the HEXFET achieve very
low on-state resistance combine with high
transconductance.
Product Summary
Part Number
IRLF230
BV
DSS
200V
R
DS(on)
0.40鈩?/div>
I
D
5.2A
Features:
n
n
n
n
n
n
Dynamic dv/dt Rating
Logic Level Gate Drive
R
DS(on)
Specific at
VGS = 4V & 5V
150擄C Operating Temperature
Fast Switching
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 5.0V, TC = 25擄C Continuous Drain Current
ID @ VGS = 5.0V, TC = 100擄C Continuous Drain Current
I DM
PD @ TC = 25擄C
VGS
dv/dt
TJ
TSTG
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
300(0.063 in.(1.6mm) from case for 10s)
0.98 (typical)
g
4/7/97
IRLF230
5.2
3.3
20
25
0.20
鹵10
4.2
-55 to 150
Units
A
W
W/K
聟
V
V/ns
o
C
1
2
3
4
5
6
7
