音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRLF120 Datasheet

  • IRLF120

  • HEXFET TRANSISTORS THRU-HOLE (TO-39)

  • 7頁

  • IRF

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 90639A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-39)
Product Summary
Part Number BVDSS R
DS(on)
IRLF120
100V
0.35鈩?/div>
I
D
5.3A
餂?/div>
IRLF120
100V, N-CHANNEL
The Logic Level 鈥楲鈥?series of power MOSFETs are de-
signed to be operated with level logic gate-to-source
voltage of 5V. In addition to the well established
餂?/div>
characterstics of HEXFETs , they have the added ad-
vantage of providing low drive requirements to inter-
face power loads to logic level IC鈥檚 and microprocessors.
Fields of applications include: high speed power appli-
cations such as switching regulators, switching con-
verters, motor drivers, solenoid and relay drivers and
drivers for high power bipolar switching transistors re-
quiring high speed and low gatedrive voltage.
The HEXFET technology is the key to International
Rectifier鈥檚 advanced line of logic level power MOSFET
transistors. The efficient geometry and unique process-
ing of the HEXFET achieve very low on-state resistance
combined with high transconductance and great de-
vice ruggedness.
.
TO-39
Features:
n
n
n
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Low Drive Requirements
Execellent Temperature Stability
Fast Switching Speeds
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 5.0V, TC = 25擄C Continuous Drain Current
ID @ VGS = 5.0V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
5.3
3.4
21
20
0.16
鹵10
120
5.3
2.0
5.5
-55 to 150
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
08/08/01

IRLF120相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3.5A I(D) ...
    ETC
  • 英文版
    HEXFET TRANSISTORS THRU-HOLE (TO-39)
    IRF
  • 英文版
    HEXFET TRANSISTORS THRU-HOLE (TO-39)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | ...
    ETC
  • 英文版
    HEXFET TRANSISTOR
    IRF
  • 英文版
    HEXFET? TRANSISTOR
  • 英文版
    Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-E...
    IRF
  • 英文版
    Power Field-Effect Transistor, 5.3A I(D), 100V, 0.35ohm, 1-E...
    IRF
  • 英文版
    Power Field-Effect Transistor, 5.2A I(D), 200V, 0.4ohm, 1-El...
    IRF

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！