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IRLF120 Datasheet

  • IRLF120

  • HEXFET TRANSISTORS THRU-HOLE (TO-39)

  • 7頁(yè)

  • IRF

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PD - 90639A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-39)
Product Summary
Part Number BVDSS R
DS(on)
IRLF120
100V
0.35鈩?/div>
I
D
5.3A
餂?/div>
IRLF120
100V, N-CHANNEL
The Logic Level 鈥楲鈥?series of power MOSFETs are de-
signed to be operated with level logic gate-to-source
voltage of 5V. In addition to the well established
餂?/div>
characterstics of HEXFETs , they have the added ad-
vantage of providing low drive requirements to inter-
face power loads to logic level IC鈥檚 and microprocessors.
Fields of applications include: high speed power appli-
cations such as switching regulators, switching con-
verters, motor drivers, solenoid and relay drivers and
drivers for high power bipolar switching transistors re-
quiring high speed and low gatedrive voltage.
The HEXFET technology is the key to International
Rectifier鈥檚 advanced line of logic level power MOSFET
transistors. The efficient geometry and unique process-
ing of the HEXFET achieve very low on-state resistance
combined with high transconductance and great de-
vice ruggedness.
.
TO-39
Features:
n
n
n
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Low Drive Requirements
Execellent Temperature Stability
Fast Switching Speeds
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 5.0V, TC = 25擄C Continuous Drain Current
ID @ VGS = 5.0V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
5.3
3.4
21
20
0.16
鹵10
120
5.3
2.0
5.5
-55 to 150
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
08/08/01

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