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IRLBA3803 Datasheet

  • IRLBA3803

  • HEXFET Power MOSFET

  • 8頁(yè)

  • IRF

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PD - 91841C
IRLBA3803
HEXFET
廬
Power MOSFET
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Logic-Level Gate Drive
Advanced Process Technology
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
Purchase IRLBA3803/P for solder plated option.
D
V
DSS
= 30V
R
DS(on)
= 0.005鈩?/div>
G
I
D
= 179A
V
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The Super-220 is a package that has been designed to have the same mechanical
outline and pinout as the industry standard TO-220 but can house a considerably
larger silicon die. It has increased current handling capability over both the TO-220
and the much larger TO-247 package. This makes it ideal to reduce component
count in multiparalled TO-220 applications, reduce system power dissipation,
upgrade existing designs or have TO-247 performance in a TO-220 outline.
This package has also been designed to meet automotive qualification standard
Q101.
S
Super
-
220
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyRU
Avalanche CurrentQU
Repetitive Avalanche EnergyQ
Peak Diode Recovery dv/dt
SU
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
179
V
126V
720
270
1.8
鹵16
610
71
27
5.0
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
N
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
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0.5
鈥撯€撯€?/div>
Max.
0.55
鈥撯€撯€?/div>
58
Units
擄C/W
www.irf.com
1
05/20/02

IRLBA3803 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 30V

  • 179A

  • 5 毫歐 @ 71A，10V

  • 1V @ 250µA

  • 140nC @ 4.5V

  • 5000pF @ 25V

  • 270W

  • 通孔

  • Super-220?

  • SUPER-220?（TO-273AA）

  • 管件

  • *IRLBA3803

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