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PD -9.1255
IRL630
HEXFET
廬
Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R
DS(ON)
Specified at V
GS
= 4V & 5V
150擄C Operating Temperature
Fast Switching
Ease of paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
V
DSS
= 200V
R
DS(on)
= 0.40
鈩?/div>
I
D
= 9.0A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
9.0
5.7
36
74
0.59
鹵10
250
9.0
7.4
5.0
-55 to + 150
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
CS
R
胃
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
0.50
鈥撯€撯€撯€?/div>
Max.
1.7
鈥撯€撯€撯€?/div>
62
Units
擄C/W
To Order
Revision 0
IRL630 產(chǎn)品屬性
1,000
分離式半導(dǎo)體產(chǎn)品
FET - 單
-
MOSFET N 通道，金屬氧化物
邏輯電平門
200V
9A
400 毫歐 @ 5.4A，5V
2V @ 250µA
40nC @ 10V
1100pF @ 25V
74W
通孔
TO-220-3
TO-220AB
管件
*IRL630
IRL630相關(guān)型號PDF文件下載
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-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.6A I(D) ...
ETC
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 4A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.3A I(D) ...
ETC
-
英文版
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
IRF
-
英文版
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 8A I(D) | ...
ETC
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 16A I(D) |...
ETC
-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) ...
ETC
-
英文版
Advanced Power MOSFET
FAIRCHILD
-
英文版
Advanced Power MOSFET
FAIRCHILD ...
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF
-
英文版
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
IRF [Inter...
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