= 0.046鈩?/div>
I
D
= 3.3 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25擄C)
Continuous Drain Current (T
C
=100擄C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25擄C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(2)
(1)
(1)
(3)
(1)
Value
200
3.3
2.1
12
鹵20
29
3.3
3.3
5.0
33
0.26
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
300
Thermal Resistance
Symbol
R
胃JC
R
胃CS
R
胃JA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
3.81
--
62.5
擄C/W
Units
Rev. B
漏1999 Fairchild Semiconductor Corporation
1