= 0.026鈩?/div>
I
D
= 38A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
38
27
140
68
0.45
鹵16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
0.50
鈥撯€撯€撯€?/div>
Max.
2.2
鈥撯€撯€撯€?/div>
62
Units
擄C/W
8/25/97
IRL3303 產(chǎn)品屬性
50
分離式半導(dǎo)體產(chǎn)品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
邏輯電平門
30V
38A
26 毫歐 @ 20A，10V
1V @ 250µA
26nC @ 4.5V
870pF @ 25V
68W
通孔
TO-220-3
TO-220AB
管件
*IRL3303
IRL3303相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
IRF
-
英文版
Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
IRF [Inter...
-
英文版
Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)
IRF
-
英文版
Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)
IRF [Inter...
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
HEXFET POWER MOSFET
IRF
-
英文版
HEXFET POWER MOSFET
IRF [Inter...
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
HEXFET Power MOSFET
IRF
-
英文版
HEXFET Power MOSFET
IRF [Inter...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 80A I(D) | ...
ETC
-
英文版
SMPS MOSFET
IRF
-
英文版
SMPS MOSFET
IRF [Inter...
-
英文版
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
IRF
1
2
3
4
5
6
7
8
