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IRL3302 Datasheet

  • IRL3302

  • HEXFET Power MOSFET

  • 8頁

  • IRF

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PD - 9.1692A
PRELIMINARY
l
l
l
l
l
IRL3302S
HEXFET
廬
Power MOSFET
D
Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
V
DSS
= 20V
G
S
R
DS(on)
= 0.020W
I
D
= 39A
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D
2
Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D
2
P ak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 4.5V聟
Continuous Drain Current, V
GS
@ 4.5V聟
Pulsed Drain Current
聛聟
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
39
25
160
57
0.45
鹵 10
130
23
5.7
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
qJC
R
qJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
2.2
40
Units
擄C/W
9/17/97

IRL3302 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 20V

  • 39A

  • 20 毫歐 @ 23A，7V

  • 700mV @ 250µA

  • 31nC @ 4.5V

  • 1300pF @ 15V

  • 57W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • *IRL3302

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