4.5m鈩?/div>
Q
G
200nC
200nC
200nC
200nC
SMD-2
IRHSLNA57Z60
30V, N-CHANNEL
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier鈥檚 low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n
Co-Pack N-channel RAD-Hard MOSFET
n
n
n
n
n
and Schottky Diode
Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Refer to IRHSNA57Z60 for Lower Rds(on)
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25擄C
IF (AV)@ TC =100擄C
TJ, TSTG
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Schottky and Body Diode Avg. Forward Current
鉃?/div>
Schottky and Body Diode Avg. Forward Current
鉃?/div>
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
Pre-Irradiation
Units
75*
75*
300
250
2.0
鹵20
500
75
25
75*
75*
-55 to 150
300 (for 5s)
3.3 (Typical)
A
W
W/擄C
V
mJ
A
mJ
A
擄C
g
www.irf.com
1
09/06/02
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