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PD - 93828

IRHQ7214

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

Product Summary

Part Number Radiation Level

IRHQ7214

100K Rads (Si)

IRHQ3214

IRHQ4214

IRHQ8214

300K Rads (Si)

600K Rads (Si)

1000K Rads (Si)

R

DS(on)

2.25鈩?/div>

I

D

1.6A

250V, QUAD N-CHANNEL

RAD-Hard HEXFET

鈩?/div>

廬

MOSFET TECHNOLOGY

LCC-28

International Rectifier鈥檚 RAD-Hard

TM

HEXFET

廬

MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite ap-

plications. These devices have been characterized for

both Total Dose and Single Event Effects (SEE). The com-

bination of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC to DC

converters and motor control. These devices retain all of

the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

n

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Absolute Maximum Ratings ( Per Die)

Parameter

ID @ VGS = 12V, TC = 25擄C

ID @ VGS = 12V, TC = 100擄C

IDM

PD @ TC = 25擄C

VGS

EAS

IAR

EAR

dv/dt

TJ

T STG

Continuous Drain Current

Pulsed Drain Current

鉃€

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

鉃?/div>

Avalanche Current

鉃€

Repetitive Avalanche Energy

鉃€

Peak Diode Recovery dv/dt

鉃?/div>

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

For footnotes refer to the last page

300 (for 5s)

0.89 (Typical)

1.6

1.0

6.4

12

0.1

鹵20

62

1.6

1.2

3.5

-55 to 150

Pre-Irradiation

Units

A

W

W/擄C

V

mJ

A

mJ

V/ns

o

C

g

www.irf.com

1

12/22/2000

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