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PD - 91781A

IRHQ6110

RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL

RAD-Hard HEXFET

POWER MOSFET

MOSFET TECHNOLOGY

SURFACE MOUNT (LCC-28)

鈩?/div>

廬

Product Summary

Part Number Radiation Level R

DS(on)

IRHQ6110

100K Rads (Si)

0.6鈩?/div>

IRHQ63110

300K Rads (Si)

0.6鈩?/div>

IRHQ6110

100K Rads (Si)

1.1鈩?/div>

IRHQ63110

300K Rads (Si) 1.1鈩?/div>

I

D

3.0A

-2.3A

CHANNEL

N

P

LCC-28

International Rectifier鈥檚 RAD-Hard

TM

HEXFET

廬

MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite applica-

tions. These devices have been characterized for both

Total Dose and Single Event Effects (SEE). The combina-

tion of low R

DS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC con-

verters and motor control. These devices retain all of the

well established advantages of MOSFETs such as voltage

control, fast switching, ease of paralleling and tempera-

ture stability of electrical parameters.

Features:

n

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25擄C

ID @ VGS = 12V, TC = 100擄C

IDM

PD @ TC = 25擄C

VGS

EAS

IAR

EAR

dv/dt

TJ

T STG

Continuous Drain Current

Pulsed Drain Current

鉃€

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

鉃€

Repetitive Avalanche Energy

鉃€

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

For footnotes refer to the last page

300 (for 5s)

0.89 (Typical)

Pre-Irradiation

N-Channel

3.0

1.9

12

0.1

鹵20

85

鉃?/div>

3.0

1.2

3.0

鉃?/div>

-55 to 150

o

P-Channel

-2.3

-1.5

-9.2

12

0.1

Units

A

W

W/擄C

鹵20

75

~

-2.3

1.2

9.0

V

mJ

A

mJ

V/ns

C

g

www.irf.com

1

7/24/01

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