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IRHNJ57234SE Datasheet

  • IRHNJ57234SE

  • RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

  • 8頁(yè)

  • IRF

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PD - 93837A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number
IRHNJ57234SE
Radiation Level
100K Rads (Si)
R
DS(on)
0.40鈩?/div>
I
D
10A
IRHNJ57234SE
JANSR2N7487U3
250V, N-CHANNEL
REF: MIL-PRF-19500/704
5

TECHNOLOGY
聶
QPL Part Number
JANSR2N7487U3
International Rectifier鈥檚 R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
脌
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
10
6.4
40
75
0.6
鹵20
58
10
7.5
2.4
-55 to 150
300 (for 5s)
1.0(Typical)
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
05/07/04

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