IRHNA57160 Datasheet

IC型號：
IRHNA57160
PDF描述：
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
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PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 91860H

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number Radiation Level

IRHNA57160 100K Rads (Si)

IRHNA53160

IRHNA54160

300K Rads (Si)

600K Rads (Si)

DS(on)

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0.013鈩?/div>

IRHNA57160

JANSR2N7469U2

100V, N-CHANNEL

REF: MIL-PRF-19500/673

TECHNOLOGY

聶

QPL Part Number

75*A JANSR2N7469U2

75*A JANSF2N7469U2

75*A JANSG2N7469U2

75*A JANSH2N7469U2

IRHNA58160 1000K Rads (Si)

SMD-2

International Rectifier鈥檚 R5 technology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm

)). The combination

of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25擄C

ID @ VGS = 12V, TC = 100擄C

IDM

PD @ TC = 25擄C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

脌

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

脕

Avalanche Current

脌

Repetitive Avalanche Energy

脌

Peak Diode Recovery dv/dt

脗

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

* Current is limited by package

For footnotes refer to the last page

75*

300

250

2.0

鹵20

363

6.0

-55 to 150

300 (for 5s)

3.3 (Typical)

Pre-Irradiation

Units

W/擄C

V/ns

www.irf.com

06/09/04

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