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IRHN7250 Datasheet

  • IRHN7250

  • TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

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  • 14頁(yè)

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Provisional Data Sheet PD 9.679C
REPETITIVE AVALANCHE AND dv/dt RATED
IRHN7250
IRHN8250
N-CHANNEL
HEXFET
廬
TRANSISTOR
200 Volt, 0.10鈩? MEGA RAD HARD HEXFET
鈩?/div>
International Rectifier鈥檚 MEGA RAD HARD technology
HEXFET power MOSFETs demonstrate excellent
threshold voltage stability and breakdown voltage sta-
bility at total radiation doses as high as 1 x 10
6
Rads
(Si). Under
identical
pre- and post-radiation test con-
ditions, International Rectifier鈥檚 RAD HARD HEXFETs
retain
identical
electrical specifications up to 1 x 10
5
Rads (Si) total dose. At 1 x 10
6
Rads (Si) total dose,
under the same pre-dose conditions, only minor shifts
in the electrical specifications are observed and are so
specified in table 1. No compensation in gate drive cir-
cuitry is required. In addition, these devices are capable
of surviving transient ionization pulses as high as 1 x
10
12
Rads (Si)/Sec, and return to normal operation within
a few microseconds. Single Event Effect (SEE) testing
of International Rectifier RAD HARD HEXFETs has dem-
onstrated virtual immunity to SEE failure. Since the
MEGA RAD HARD process utilizes International
Rectifier鈥檚 patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space
and weapons environments.
MEGA RAD HARD
Product Summary
Part Number
IRHN7250
IRHN8250
BV
DSS
200V
200V
R
DS(on)
0.10鈩?/div>
0.10鈩?/div>
I
D
26A
26A
Features:
s
s
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聦
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
26
16
104
150
1.2
鹵20
500
26
15
5.0
-55 to 150
Pre-Radiation
IRHN7250, IRHN8250
Units
A
W
W/K
聬
V
mJ
A
mJ
V/ns
o
C
300 (for 5 sec.)
2.6 (typical)
g
To Order
F-347

IRHN7250相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 25A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18.5A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | ...
    ETC
  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF [Inter...
  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF
  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF [Inter...
  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF [Inter...
  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF
  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF [Inter...
  • 英文版
    60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a...
    ETC
  • 英文版
    RADIATION HARDENED POWER MOSFET
  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
    IRF [Inter...
  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF
  • 英文版
    RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
    IRF [Inter...
  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
    IRF
  • 英文版
    TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)
    IRF [Inter...
  • 英文版
    HEXFET TRANSISTOR
    IRF

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