IRHM54Z60 Datasheet

IC型號：
IRHM54Z60
PDF描述：
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | ...
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109.67KB
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8頁
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ETC

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PD - 93786A

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number Radiation Level R

DS(on)

IRHM57Z60

100K Rads (Si) 0.0095鈩?/div>

IRHM53Z60

300K Rads (Si) 0.0095鈩?/div>

IRHM54Z60

IRHM58Z60

600K Rads (Si)

1000K Rads (Si)

0.0095鈩?/div>

0.010鈩?/div>

35A*

IRHM57Z60

30V, N-CHANNEL

TECHNOLOGY

聶

TO-254AA

International Rectifier鈥檚 R5

technology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm

)). The combination

of low

RDS(on)

and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Ratings

Dynamic dv/dt Ratings

Simple Drive Requirements

Ease of Paralleling

Hermatically Sealed

Electically Isolated

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25擄C

ID @ VGS = 12V, TC = 100擄C

IDM

PD @ TC = 25擄C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

聦

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

聧

Avalanche Current

聦

Repetitive Avalanche Energy

聦

Peak Diode Recovery dv/dt

聨

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

* Current is limited by internal wire diameter

For footnotes refer to the last page

35*

140

250

2.0

鹵20

500

1.1

-55 to 150

Pre-Irradiation

Units

W/擄C

V/ns

300 (0.063 in./1.6 mm from case for 10s)

9.3 (Typical)

www.irf.com

4/10/00

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