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IRGSL8B60KPBF Datasheet

  • IRGSL8B60KPBF

  • INSULATED GATE BIPOLAR TRANSISTOR

  • 450.81KB

  • 13頁

  • IRF

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PD - 95645A
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Lead-Free.
G
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
C
V
CES
= 600V
I
C
= 20A, T
C
=100擄C
t
sc
>10碌s, T
J
=150擄C
E
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.8V
TO-220AB
D
2
Pak
IRGB8B60KPbF IRGS8B60K
TO-262
IRGSL8B60K
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25擄C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
28
19
Units
V
A
c
56
56
鹵20
167
83
-55 to +175
擄C
300 (0.063 in. (1.6mm) from case)
V
W
Gate-to-Emitter Voltage
Maximum Power Dissipation
P
D
@ T
C
= 100擄C Maximum Power Dissipation
Operating Junction and
T
J
T
STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Min.
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.44
Max.
0.90
鈥撯€撯€?/div>
62
40
鈥撯€撯€?/div>
Units
擄C/W
d
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount, Steady State)
Weight
e
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
g
www.irf.com
1
11/18/04

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