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IRGS6B60K Datasheet

  • IRGS6B60K

  • INSULATED GATE BIPOLAR TRANSISTOR

  • 13頁

  • IRF

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PD - 94575A
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Positive VCE (on) Temperature Coefficient.
C
IRGB6B60K
IRGS6B60K
IRGSL6B60K
V
CES
= 600V
I
C
= 7.0A, T
C
=100擄C
G
E
t
sc
> 10碌s, T
J
=150擄C
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
n-channel
V
CE(on)
typ. = 1.8V
TO-220AB
IRGB6B60K
D
2
Pak
IRGS6B60K
TO-262
IRGSL6B60K
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
聛
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
13
7.0
26
26
鹵 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Wt
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
聜
Junction-to-Ambient (PCB Mount, steady state)
聝
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.44
Max.
1.4
鈥撯€撯€?/div>
62
40
鈥撯€撯€?/div>
Units
擄C/W
g
www.irf.com
1
8/18/04

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