PD - 94799
INSULATED GATE BIPOLAR TRANSISTOR
C
IRGB30B60K
IRGS30B60K
IRGSL30B60K
V
CES
= 600V
I
C
= 50A, T
C
=100擄C
at T
J
=175擄C
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology.
鈥?10碌s Short Circuit Capability.
鈥?Square RBSOA.
鈥?Positive VCE (on) Temperature Coefficient.
鈥?Maximum Junction Temperature rated at 175擄C.
G
E
t
sc
> 10碌s, T
J
=150擄C
n-channel
V
CE(on)
typ. = 1.95V
Benefits
鈥?Benchmark Efficiency for Motor Control.
鈥?Rugged Transient Performance.
鈥?Low EMI.
鈥?Excellent Current Sharing in Parallel Operation.
TO-220AB
IRGB30B60K
D
2
Pak
IRGS30B60K
TO-262
IRGSL30B60K
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
ISOL
V
GE
P
D
@ T
C
= 25擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
78
50
120
120
2500
鹵20
370
180
-55 to +175
Units
V
A
g
聶
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
V
W
P
D
@ T
C
= 100擄C Maximum Power Dissipation
擄C
300 (0.063 in. (1.6mm) from case)
10 lbf路in (1.1 N路m)
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.44
Max.
0.41
鈥撯€撯€?/div>
62
40
鈥撯€撯€?/div>
Units
擄C/W
d
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount, Steady State)
e脙脙
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
g
www.irf.com
1
10/8/03
IRGS30B60K相關型號PDF文件下載
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