鈮?/div>
5碌s, T
J(max)
= 175擄C
n-channel
C
V
CE(on)
typ. = 1.65V
Benefits
鈥?Device optimized for induction heating and soft switching
applications
鈥?High Efficiency due to Low V
CE(on)
, Low Switching Losses
and Ultra-low V
F
鈥?Rugged transient Performance for increased reliability
鈥?Excellent Current sharing in parallel operation
鈥?Low EMI
C
GC
E
TO-247AC
IRGP4068DPbF
E
GC
TO-247AD
IRGP4068D-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 160擄C
I
FSM
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Max.
600
96
48
192
192
Units
V
c
d
d
A
Diode Continous Forward Current
Diode Non Repetitive Peak Surge Current @ T
J
= 25擄C
Diode Peak Repetitive Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
8.0
175
16
鹵20
鹵30
330
170
-55 to +175
擄C
300 (0.063 in. (1.6mm) from case)
10 lbf路in (1.1 N路m)
W
V
Thermal Resistance
Parameter
R
胃JC
(IGBT)
R
胃JC
(Diode)
R
胃CS
R
胃JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.24
80
Max.
0.45
2.0
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
1
www.irf.com
08/16/06
IRGP4068D-EPBF 產(chǎn)品屬性
25
分離式半導(dǎo)體產(chǎn)品
IGBT - 單路
-
溝道
600V
2.14V @ 15V，48A
96A
330W
標(biāo)準(zhǔn)型
通孔
TO-247-3（TO-247AD）
TO-247AD
散裝
IRGP4068D-EPBF相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
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