PD- 93818
IRGP30B120KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Low V
CE
(on) Non Punch Through (NPT)
Technology
鈥?Low Diode V
F
(1.76V Typical @ 25A & 25擄C)
鈥?10
碌
s Short Circuit Capability
鈥?Square RBSOA
鈥?Ultrasoft Diode Recovery Characteristics
鈥?Positive V
CE
(on) Temperature Coefficient
鈥?Extended Lead TO-247AD Package
C
Motor Control Co-Pack IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
= 2.28V
V
GE
= 15V, I
C
= 25A, 25擄C
N-channel
Benefits
鈥?Benchmark Efficiency for Motor Control
Applications
鈥?Rugged Transient Performance
鈥?Low EMI
鈥?Significantly Less Snubber Required
鈥?Excellent Current Sharing in Parallel Operation
鈥?Longer leads for Easier Mounting
TO-247AD
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
(Fig.1)
Continuous Collector Current
(Fig.1)
Pulsed Collector Current
(Fig.3, Fig. CT.5)
Clamped Inductive Load Current
(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
(Fig.2)
Maximum Power Dissipation
(Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
Max.
1200
60
30
120
120
30
120
鹵 20
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
W
t
Z
胃JC
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
(Fig.24)
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.24
鈥撯€撯€?/div>
6 (0.21)
Max.
0.42
0.83
鈥撯€撯€?/div>
40
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
www.irf.com
1
12/14/99
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