鈥?/div>
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
V
CES
= 1200V
G
E
V
CE(on) max
=2.9V
@V
GE
= 15V, I
C
= 25A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f
Ic/2
, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
TO-259AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
鉃€
Clamped Inductive Load Current
鉃?/div>
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
1200
45
25
180
90
鹵20
200
80
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
10.5 (typical)
Units
V
A
V
W
擄C
g
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0.625
0.21 鈥?/div>
鈥?/div>
30
擄C/W
Test Conditions
For footnotes refer to the last page
www.irf.com
1
02/18/02
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