PD-9.1439
TARGET
IRGCH50KE
IRGCH50KE IGBT Die in Wafer Form
C
G
E
1200 V
Size 5
Ultra-Fast Speed
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Description
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Guaranteed (Min/Max)
Test Conditions
3.8V Max.
I
C
= 20A, T
J
= 25擄C, V
GE
= 15V
1200V Min.
T
J
= 25擄C, I
CES
= 250碌A(chǔ), V
GE
= 0V
3.0V Min., 6.0V Max.
V
GE
= V
CE
, T
J
=25擄C, I
C
=250碌A(chǔ)
250 碌A(chǔ) Max.
T
J
= 25擄C, V
CE
= 1200V
鹵
500 nA Max.
T
J
= 25擄C, V
GE
= +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : IRGPH50K
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.257" x 0.260"
125mm, with std. < 100 > flat
.015" + / -.003"
01-5104
100 Microns
0.25mm Diameter Minimum
See Die Outline drawing below
Store in original container, in dessicated
nitrogen, with no contamination
Die Outline
INK DOT
LOCATION
3.01
(.119 )
NOTES :
1. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS ( INCHES )
2. CONTRO LLING DIMENSION : ( INCH )
3. LETTER DESIGNATION :
S = SO URCE
G = GATE
4. DIMENSIONAL TOLERANCES
BONDING PADS : < 0.635 TO LERANCE = +/- 0.013
W IDTH
< (.0250 ) TOLERANCE =+/- (.0005 )
&
> 0.635 TOLERANCE = +/- 0.025
LENGTH
> (.0250 ) TOLERANCE = +/- (.0010 )
OVERALL DIE
< 1.270 TOLERANCE = +/- 0.102
W IDTH
< (.050 ) TOLERANCE = +/- (.004 )
&
> 0.635 TOLERANCE = +/- 0.203
LENGTH
> (.050 ) TOLERANCE = +/- (.008 )
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
1.78
(.070 )
EMITTER
6.60
(.260 )
0.56
(.022 )
G
6.53
(.257 )
0.58
(.023 )
1
