IRG4RC10STR Datasheet

IC型號：
IRG4RC10STR
PDF描述：
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-25...
文件大?。?/label>
150.39KB
PDF頁數(shù)：
8頁
芯片廠家：
ETC

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上傳產(chǎn)品規(guī)格書

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PD - 91732A

IRG4RC10S

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Extremely low voltage drop; 1.0V typical at 2A, 100擄C

鈥?Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

鈥?Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

鈥?Industry standard TO-252AA package

Standard Speed IGBT

CES

= 600V

CE(on) typ.

= 1.10V

= 15V, I

= 2.0A

n-channel

Benefits

鈥?Generation 4 IGBT's offer highest efficiency available

鈥?IGBT's optimized for specified application conditions

D-PAK

TO-252AA

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

聛

Clamped Inductive Load Current

聜

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

聝

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

600

8.0

鹵 20

110

-55 to + 150

300 (0.063 in. (1.6mm) from case )

Units

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Weight

Typ.

鈥撯€撯€?/div>

0.3 (0.01)

Max.

3.3

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

8/30/99

標準包裝
2,000
類別
分離式半導體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
1.8V @ 15V，8A
電流 - 集電極 (Ic)（最大）
14A
功率 - 最大
38W
輸入類型
標準型
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應商設備封裝
D-Pak
包裝
帶卷 (TR)

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