IRG4RC10K Datasheet

IC型號：
IRG4RC10K
PDF描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
文件大小：
136.02KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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上傳產(chǎn)品規(guī)格書

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PD 91735A

IRG4RC10K

INSULATED GATE BIPOLAR TRANSISTOR

Features

鈥?Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit

Rated to 10碌s @ 125擄C, V

= 15V

鈥?Generation 4 IGBT design provides higher efficiency

than Generation 3

鈥?Industry standard TO-252AA package

Short Circuit Rated

UltraFast IGBT

CES

= 600V

CE(on) typ.

= 2.39V

= 15V, I

= 5.0A

n-channel

Benefits

鈥?Generation 4 IGBT's offer highest efficiency available

鈥?IGBT's optimized for specified application conditions

D-PAK

TO-252AA

Absolute Maximum Ratings

Parameter

CES

@ T

= 25擄C

@ T

= 100擄C

ARV

@ T

= 25擄C

@ T

= 100擄C

STG

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector CurrentQ

Clamped Inductive Load CurrentR

Short Circuit Withstand Time

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

600

9.0

5.0

鹵 20

-55 to + 150

300 (0.063 in. (1.6mm) from case )

Units

碌s

擄C

Thermal Resistance

Parameter

胃JC

胃JA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Weight

Typ.

鈥撯€撯€?/div>

0.3 (0.01)

Max.

3.3

鈥撯€撯€?/div>

Units

擄C/W

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

12/30/00

標(biāo)準(zhǔn)包裝
75
類別
分離式半導(dǎo)體產(chǎn)品
家庭
IGBT - 單路
系列
-
IGBT 類型
-
電壓 - 集電極發(fā)射極擊穿（最大）
600V
Vge, Ic時的最大Vce（開）
2.62V @ 15V，5A
電流 - 集電極 (Ic)（最大）
9A
功率 - 最大
38W
輸入類型
標(biāo)準(zhǔn)型
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應(yīng)商設(shè)備封裝
D-Pak
包裝
管件
其它名稱
*IRG4RC10K

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