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IRG4RC10KD Datasheet

  • IRG4RC10KD

  • INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...

  • 191.19KB

  • 10頁

  • IRF

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PD 91736A
IRG4RC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10碌s @ 125擄C, V
GE
= 15V
鈥?Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
鈥?Industry standard TO-252AA package
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 2.39V
@V
GE
= 15V, I
C
= 5.0A
n-ch an nel
Benefits
鈥?Latest generation 4 IGBT's offer highest power density
motor controls possible
鈥?HEXFRED
TM
diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
鈥?For hints see design tip 97003
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
9.0
5.0
18
18
4.0
16
10
鹵 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
碌s
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.3 (0.01)
Max.
3.3
7.0
50
鈥撯€撯€?/div>
Units
擄C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
12/30/00

IRG4RC10KD 產品屬性

  • 75

  • 分離式半導體產品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.62V @ 15V，5A

  • 9A

  • 38W

  • 標準型

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • D-Pak

  • 管件

  • *IRG4RC10KD

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