PD - 94255
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
鈥?Extremely low voltage drop 1.1Vtyp. @ 2A
鈥?S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
鈥?Very Tight Vce(on) distribution
鈥?IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
鈥?Industry standard D
2
Pak & TO-262 packages
C
IRG4BC10SD-S
IRG4BC10SD-L
Standard Speed
CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.10V
@V
GE
= 15V, I
C
= 2.0A
n-ch an nel
Benefits
鈥?Generation 4 IGBT's offer highest efficiencies
available
鈥?IGBT's optimized for specific application conditions
鈥?HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
鈥?Lower losses than MOSFET's conduction and
Diode losses
D
2
Pak
IRG4BC10SD-S
Max.
600
14
8.0
18
18
4.0
18
鹵 20
38
15
-55 to +150
TO-262
IRG4BC10SD-L
Units
V
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
I
F
@ T
C
= 100擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
A
V
W
擄C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Wt
Min.
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
2.0(0.07)
Max.
3.3
7.0
鈥撯€撯€?/div>
80
40
鈥撯€撯€?/div>
Units
擄C/W
Junction-to-Case - IGBT
鈥撯€撯€?/div>
Junction-to-Case - Diode
鈥撯€撯€?/div>
Case-to-Sink, flat, greased surface
鈥撯€撯€?/div>
Junction-to-Ambient, typical socket mount
U
鈥撯€撯€?/div>
Junction-to-Ambient (PCB Mount, steady state)
V
鈥撯€撯€?/div>
Weight
鈥撯€撯€?/div>
g (oz)
www.irf.com
1
06/12/01
IRG4BC10SD-STRL相關(guān)型號(hào)PDF文件下載
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.2...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.0...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.5...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.3...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3....
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVE...
IRF [Inter...
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.3...
IRF [Inter...
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