音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IRFZ46NSTRR Datasheet

  • IRFZ46NSTRR

  • HEXFET POWER MOSFET

  • 10頁(yè)

  • IRF

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 91305C
Advanced Process Technology
l
Surface Mount (IRFZ46NS)
l
Low-profile through-hole (IRFZ46NL)
l
175擄C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
l
HEXFET
廬
Power MOSFET
D
IRFZ46NS
IRFZ46NL
V
DSS
= 55V
R
DS(on)
= 0.0165鈩?/div>
G
Advanced HEXFET
廬
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ46NL) is available for low-
profile applications.
I
D
= 53A
聢
S
D 2 Pak
TO-262
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
53
聢
37
180
3.8
107
0.71
鹵 20
28
11
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
聳聳聳
聳聳聳
Max.
1.4
40
Units
擄C/W
www.irf.com
1
04/08/04

IRFZ46NSTRR相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 7.2A I(D) |...
    ETC
  • 英文版
    HEXFETR POWER MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 5.9A I(D) |...
    ETC
  • 英文版
    HEXFET Power MOSFET
    IRF
  • 英文版
    HEXFET Power MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.3A I(D) |...
    ETC
  • 英文版
    HEXFET TRANSISTORS
    IRF
  • 英文版
    HEXFET TRANSISTORS
    IRF [Inter...
  • 英文版
    HEXFET TRANSISTORS
    IRF
  • 英文版
    HEXFET TRANSISTORS
    IRF [Inter...
  • 英文版
    (166.12 k)
    ETC
  • 英文版
    HEXFET? POWER MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    Power Field Effect Transistors
    MOTOROLA

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見，您的參與是維庫(kù)提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！