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IRFZ44Z Datasheet

  • IRFZ44Z

  • Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

  • 12頁(yè)

  • IRF

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PD - 94797
AUTOMOTIVE MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
HEXFET
廬
Power MOSFET
D
IRFZ44Z
IRFZ44ZS
IRFZ44ZL
V
DSS
= 55V
Description
Specifically designed for Automotive applica-
tions, this HEXFET
廬
Power MOSFET utilizes the
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175擄C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
G
S
R
DS(on)
= 13.9m鈩?/div>
I
D
= 51A
TO-220AB
IRFZ44Z
D
2
Pak
IRFZ44ZS
TO-262
IRFZ44ZL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Pulsed Drain Current
Max.
51
36
200
80
0.53
鹵 20
86
105
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
W
W/擄C
V
mJ
A
mJ
擄C
c
i
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
h
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
Typ.
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.87
鈥撯€撯€?/div>
62
40
Units
擄C/W
j
HEXFET
廬
is a registered trademark of International Rectifier.
www.irf.com
1
10/8/03

IRFZ44Z 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 55V

  • 51A

  • 13.9 毫歐 @ 31A，10V

  • 4V @ 250µA

  • 43nC @ 10V

  • 1420pF @ 25V

  • 80W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • *IRFZ44Z

IRFZ44Z相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
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    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
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