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IRFZ14L Datasheet

  • IRFZ14L

  • TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | ...

  • 10頁

  • ETC

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上傳產品規(guī)格書

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PD - 9.890A
IRFZ14S/L
HEXFET
廬
Power MOSFET
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRFZ14S)
Low-profile through-hole (IRFZ14L)
175擄C Operating Temperature
Fast Switching
D
V
DSS
= 60V
R
DS(on)
= 0.20鈩?/div>
G
I
D
= 10A
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ14L) is available for low-
profile applications.
S
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
10
7.2
40
3.7
43
0.29
鹵 20
47
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
mJ
V/ns
擄C
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
3.5
40
Units
擄C/W
8/25/97
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IRFZ14L 產品屬性

  • 50

  • 分離式半導體產品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 60V

  • 10A

  • 200 毫歐 @ 6A，10V

  • 4V @ 250µA

  • 11nC @ 10V

  • 300pF @ 25V

  • 3.7W

  • 通孔

  • TO-262-3，長引線，I²Pak，TO-262AA

  • TO-262-3

  • 管件

  • *IRFZ14L

IRFZ14L相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 7.2A I(D) |...
    ETC
  • 英文版
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    IRF [Inter...
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    HEXFET TRANSISTORS
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    HEXFET TRANSISTORS
    IRF [Inter...
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    (166.12 k)
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  • 英文版
    HEXFET? POWER MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF
  • 英文版
    Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    Power Field Effect Transistors
    MOTOROLA

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