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IRFY9240CM Datasheet

  • IRFY9240CM

  • POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4...

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Provisional Data Sheet No. PD 9.1295A
HEXFET POWER MOSFET
廬
IRFY9240CM
P-CHANNEL
-200 Volt, 0.51鈩?HEXFET
International Rectifier鈥檚 HEXFET technology is the key to
its advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET power MOSFETs also feature all of the well-
established advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high en-
ergy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET power MOSFET鈥檚 totally isolated package
eliminates the need for additional isolating material between
the device and the heatsink. This improves ther mal effi-
ciency and reduces drain capacitance.
Product Summary
Part Number
IRFY9240CM
BV
DSS
-200V
R
DS(on)
0.51鈩?/div>
I
D
-9.4A
Features
n
n
n
n
Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
I D @ VGS= -10V, TC = 25擄C
I D @ VGS= -10V, TC = 100擄C
I DM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
Tstg
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalance Energy
聜
Avalance Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
IRFY9240CM
-9.4
-6.0
-36
100
0.8
鹵20
700
-9.4
10
-5.5
-55 to 150
Units
A
W
W/K聟
V
mJ
A
mJ
V/ns
擄C
g
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
* I
D
current limited by pin diameter
To Order

IRFY9240CM相關(guān)型號(hào)PDF文件下載

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  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.3A I(D) ...
    ETC
  • 英文版
    N-Channel MOSFET in a Hermetically sealed TO257AB Metal Pack...
    SEME-LAB [...
  • 英文版
    N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
    SEME-LAB
  • 英文版
    N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB
  • 英文版
    N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
    SEME-LAB [...
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel
    ETC
  • 英文版
    N-Channel MOSFET in a Hermetically sealed TO257AB Metal Pack...
    SEME-LAB

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