PD - 96901A
IRFB3307
IRFS3307
IRFSL3307
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
G
S
HEXFET
廬
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max.
I
D
75V
5.0m
:
6.3m
:
130A
G DS
TO-220AB
IRFB3307
G DS
D
2
Pak
IRFS3307
G DS
TO-262
IRFSL3307
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy
e
Avalanche Current
c
Repetitive Avalanche Energy
g
Max.
130c
91c
510
250
1.6
鹵 20
11
-55 to + 175
300
10lbxin (1.1Nxm)
270
See Fig. 14, 15, 16a, 16b
Units
A
W
W/擄C
V
V/ns
擄C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
mJ
A
mJ
Thermal Resistance
Symbol
R
胃JC
R
胃CS
R
胃JA
R
胃JA
Parameter
Junction-to-Case
k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
k
Junction-to-Ambient (PCB Mount) , D Pak
jk
2
Typ.
鈥撯€撯€?/div>
0.50
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鈥撯€撯€?/div>
Max.
0.61
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62
40
Units
擄C/W
www.irf.com
1
11/04/04
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