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鹵 200nA
-55擄C to 175擄C Max.
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Reference Packaged Part
Cr-NiV-Ag ( 1kA擄-2kA擄-5kA擄 )
100% Al (0.008 mm)
.257" x .360" [ 6.53 mm x 9.14 mm ]
150 mm, with 100 flat
0.254 mm 鹵 0.025 mm
01-5403
0.107 mm
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 擄C
IRFP2907
NOT ES :
1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ].
2. CONT ROL L ING DIMENS ION: [INCH].
3. LET T ER DES IGNAT ION:
S = S OURCE
G = GAT E
S K = S OURCE KELVIN
IS = CURRENT S ENS E
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] T OL ERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] T OL ERANCE = + /- [.008]
E = EMITT ER
Die Outline
6.53
[.257]
4. DIMENS IONAL T OL ERANCES:
B ONDING PADS :
SOURCE
SOURCE
9.14
[.360]
WIDTH
&
L ENGT H
OVERALL DIE:
GAT E
WIDTH
&
L ENGT H
0.508
[.020]
0.508
[.020]
5. UNL ES S OT HERWIS E NOT ED AL L DIE ARE GEN III
* Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in
die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.
** Contact factory for these product forms.
***The typical R
DS(on)
is an estimated value for the bare die, actual results will depend on customer packaging materials and
dimensions.
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