Provisional Data Sheet No. PD-9.1417
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Generation 5 HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design for which HEXFETs
are well known, provides the designer with an ex-
tremely efficient device for use in a wide variety of
applications.
The Surface Mount Device 1 (SMD-1) package rep-
resents anothther step in the continual evolution of
surface mount technology. Designed to be a close
replacement for the TO-3 package, the SMD-1 will
give designers the extra flexibility they need to in-
crease circuit board density. International Rectifier has
engineered the SMD-1 package to meet the specific
needs of the power market by increasing the size of
the termination pads, thereby enhancing thermal and
electical performance.
Product Summary
Part Number
IRFN3710
BV
DSS
100V
R
DS(on)
0.028鈩?/div>
I
D
45A
Features:
n
n
n
n
n
n
n
n
Surface Mount
Small Footprint
Alternative to TO-3 Package
Hermetically Sealed
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25擄C Continuous Drain Current
ID @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
聛
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
300 (for 5 sec.)
2.6 (typical)
IRFN3710
45
28
180
125
1.0
鹵20
690
27
12.5
5.0
-55 to 150
Units
A
W
W/K
聟
V
mJ
A
mJ
V/ns
o
C
g
To Order
1
2
3
4
