Provisional Data Sheet No. PD-9.1547
鈩?/div>
HEXFET technology is the key to International Rectifier鈥檚
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance com-
bined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits.
The Surface Mount Device (SMD-1) package represents
another step in the continual evolution of surface mount
technology. The SMD-1 will give designers the extra flex-
ibility they need to increase circuit board density. Inter-
national Rectifier has engineered the SMD-1 package to
meet the specific needs of the power market by increas-
ing the size of the termination pads, thereby enhancing
thermal and electrical performance.
IRFN150
N-CHANNEL
Product Summary
Part Number
IRFN150
BV
DSS
100V
R
DS(on)
0.060鈩?/div>
I
D
34A
Features:
s
s
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 10V, TC = 25擄C Continuous Drain Current
ID @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
聦
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRFN150
34
21
136
150
1.2
鹵20
150
34
15
5.5
-55 to 150
300 (for 5 seconds)
2.6 (typical)
Units
A
W
W/K
聬
V
mJ
A
mJ
V/ns
o
C
g
To Order
1
2
3
4
5
6
