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IRFM120A Datasheet

  • IRFM120A

  • IEEE802.3af Compatible

  • 7頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
IRFM120A
BV
DSS
= 100 V
R
DS(on)
= 0.2
!
I
D
= 2.3 A
SOT-223
2
IEEE802.3af Compatible
!
Avalanche Rugged Technology
!
Rugged Gate Oxide Technology
!
Lower Input Capacitance
!
Improved Gate Charge
!
Extended Safe Operating Area
!
Lower Leakage Current : 10
#A
(Max.) @ V
DS
= 100V
!
Lower R
DS(ON)
: 0.155
!
(Typ.)
1
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
A
=25%)
Continuous Drain Current (T
A
=70%)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25%) *
Linear Derating Factor *
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
'
&
&
(
&
Value
100
2.3
1.84
18
"20
123
2.3
0.24
6.5
2.4
0.019
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/%
%
300
Thermal Resistance
Symbol
R
$JA
Characteristic
Junction-to-Ambient *
Typ.
--
Max.
52
Units
%/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. C

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