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IRFE310 Datasheet

  • IRFE310

  • HEXFET TRANSISTOR

  • 7頁

  • IRF

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PD - 91782
IRFE310
REPETITIVE AVALANCHE AND dv/dt RATED
JANTX2N6786U
HEXFET
TRANSISTOR
JANTXV2N6786U
[REF:MIL-PRF-19500/556]
N-CHANNEL
鈩?/div>
400Volt, 3.6鈩? HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the thermal
and electrical performance. The lid of the package
is grounded to the source to reduce RF interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits,
and virtually any application where high reliability
is required.
Product Summary
Part Number
IRFE310
BV
DSS
400V
R
DS(on)
3.6鈩?/div>
I
D
1.25A
Features:
n
n
n
n
n
n
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Small footprint
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25擄C
Continuous Drain Current
ID @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25擄C
Max. Power Dissipation
VGS
EAS
dv/dt
TJ
T STG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Surface Temperature
Weight
IRFE310, JANTX-, JANTXV-, 2N6786U
Units
1.25
0.80
5.5
15
0.12
鹵20
34
2.8
-55 to 150
300 ( for 5 seconds)
0.42 (typical)
A
W
W/擄C
V
mJ
V/ns
o
C
g
www.irf.com
1
10/9/98

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