IRFBC40A Datasheet

IC型號：
IRFBC40A
PDF描述：
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)
文件大小：
99.53KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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上傳產(chǎn)品規(guī)格書

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PD -91885A

SMPS MOSFET

IRFBC40A

HEXFET

廬

Power MOSFET

Applications

Switch Mode Power Supply ( SMPS )

Uninterruptable Power Supply

High speed power switching

Benefits

Low Gate Charge Qg results in Simple

Drive Requirement

Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

Fully Characterized Capacitance and

Avalanche Voltage and Current

Effective Coss Specified ( See AN 1001)

DSS

600V

Rds(on) max

1.2鈩?/div>

6.2A

TO-220AB

G DS

Absolute Maximum Ratings

Parameter

@ T

= 25擄C

@ T

= 100擄C

= 25擄C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

聛

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

聝

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

Max.

6.2

3.9

125

1.0

鹵 30

6.0

-55 to + 150

300 (1.6mm from case )

10 lbf鈥n (1.1N鈥)

Units

W/擄C

V/ns

擄C

Typical SMPS Topologies:

Single Transistor Forward

Notes

聛

through

聟

are on page 8

www.irf.com

6/24/99

標準包裝
1,000
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標準型
漏極至源極電壓(Vdss)
600V
電流 - 連續(xù)漏極(Id) @ 25° C
6.2A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
1.2 歐姆 @ 3.7A，10V
Id 時的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
42nC @ 10V
輸入電容 (Ciss) @ Vds
1036pF @ 25V
功率 - 最大
125W
安裝類型
通孔
封裝/外殼
TO-220-3
供應商設備封裝
TO-220AB
包裝
管件
其它名稱
*IRFBC40A

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