IRF7751 Datasheet

IC型號：
IRF7751
PDF描述：
Power MOSFET(Vdss=-30V)
文件大?。?/label>
163.07KB
PDF頁數(shù)：
8頁
芯片廠家：
IRF

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PD - 94002

IRF7751

HEXFET

廬

Power MOSFET

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

DSS

-30V

DS(on)

max

35m鈩V

= -10V

55m鈩V

= -4.5V

-4.5A

-3.8A

Description

HEXFET

廬

power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

signer with an extremely efficient and reliable device

for use in battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

TSSOP-8

Absolute Maximum Ratings

Parameter

@ T

= 25擄C

@ T

= 70擄C

= 25擄C

= 70擄C

STG

Drain-Source Voltage

Continuous Drain Current, V

@ -10V

Continuous Drain Current, V

@ -10V

Pulsed Drain Current

聛

Power Dissipation

聝

Power Dissipation

聝

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-30

-4.5

-3.6

-18

1.0

0.64

0.008

鹵20

-55 to +150

Units

W/擄C

擄C

Thermal Resistance

Parameter

胃JA

Maximum Junction-to-Ambient

聝

Max.

125

Units

擄C/W

www.irf.com

10/04/2000

標(biāo)準(zhǔn)包裝
100
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 陣列
系列
HEXFET®
FET 型
2 個(gè) P 溝道（雙）
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
4.5A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
35 毫歐 @ 4.5A，10V
Id 時(shí)的 Vgs(th)（最大）
2.5V @ 250µA
閘電荷(Qg) @ Vgs
44nC @ 10V
輸入電容 (Ciss) @ Vds
1464pF @ 25V
功率 - 最大
1W
安裝類型
表面貼裝
封裝/外殼
8-TSSOP（0.173"，4.40mm 寬）
供應(yīng)商設(shè)備封裝
8-TSSOP
包裝
管件

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