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PD - 94001A

IRF7705

HEXFET

廬

Power MOSFET

l

l

l

l

l

Ultra Low On-Resistance

P-Channel MOSFET

Very Small SOIC Package

Low Profile ( < 1.2mm)

Available in Tape & Reel

V

DSS

-30V

R

DS(on)

max (m鈩?

鈩?

18 @V

GS

= -10V

30 @V

GS

= -4.5V

I

D

-8.0A

-6.0A

Description

HEXFET

廬

power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides the de-

1

2

3

4

1=

2=

3=

4=

D

S

S

G

D

8

7

G

6

S

8=

7=

6=

5=

D

S

S

D

5

signer with an extremely efficient and reliable device

for use in battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

TSSOP-8

Absolute Maximum Ratings

Parameter

V

DS

I

D

@ T

C

= 25擄C

I

D

@ T

C

= 70擄C

I

DM

P

D

@T

C

= 25擄C

P

D

@T

C

= 70擄C

V

GS

T

J,

T

STG

Drain- Source Voltage

Continuous Drain Current, V

GS

@ -10V

Continuous Drain Current, V

GS

@ -10V

Pulsed Drain Current

聛

Power Dissipation

聝

Power Dissipation

聝

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-30

-8.0

-6.0

-30

1.5

0.96

0.012

鹵 20

-55 to + 150

Units

V

A

W

W/擄C

V

擄C

Thermal Resistance

Parameter

R

胃JA

Maximum Junction-to-Ambient

聝

Max.

83

Units

擄C/W

www.irf.com

1

06/05/01

next

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