PD - 94683B
IRF7495
HEXFET
廬
Power MOSFET
Applications
l
High frequency DC-DC converters
V
DSS
100V
R
DS(on)
max
22m @V
GS
= 10V
:
I
D
7.3A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 100擄C
I
DM
P
D
@T
A
= 25擄C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
100
鹵 20
7.3
4.6
58
2.5
0.02
7.3
-55 to + 150
Units
V
A
c
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
W
W/擄C
V/ns
擄C
h
Storage Temperature Range
Thermal Resistance
Parameter
R
胃JL
R
胃JA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
Max.
20
50
Units
擄C/W
e
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Notes
聛
through
聠
are on page 8
www.irf.com
1
09/23/03
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