= 0.029鈩?/div>
Schottky Vf = 0.39V
2
7
3
6
4
5
T op V ie w
The
FETKY
family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
S O -8
Absolute Maximum Ratings (T
A
= 25擄C unless otherwise noted)
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current
聫
Pulsed Drain Current
聦
Power Dissipation
聫
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聧
Junction and Storage Temperature Range
Maximum
6.5
5.2
52
2.0
1.3
16
鹵 20
-5.0
-55 to +150
Units
A
W
mW/擄C
V
V/ns
擄C
Thermal Resistance Ratings
Parameter
R
胃JA
Junction-to-Ambient
聟
Notes:
聦
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
聧
Starting T
J
= 25擄C, L = 10mH, R
G
= 25鈩? I
AS
= 4.0A
聨
I
SD
鈮?/div>
4.0A, di/dt
鈮?/div>
74A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
J
鈮?/div>
150擄C
聫
Pulse width
鈮?/div>
300碌s; duty cycle
鈮?/div>
2%
聟
Surface mounted on FR-4 board, t
鈮?/div>
10sec.
Maximum
62.5
Units
擄C/W
www.irf.com
1
3/17/99
IRF7353D1 產(chǎn)品屬性
95
分離式半導(dǎo)體產(chǎn)品
FET - 單
FETKY™
MOSFET N 通道，金屬氧化物
二極管（隔離式）
30V
6.5A
32 毫歐 @ 5.8A，10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2W
表面貼裝
8-SOIC（0.154"，3.90mm 寬）
8-SO
管件
*IRF7353D1
IRF7353D1相關(guān)型號PDF文件下載
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版本
描述
廠商
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1
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3
4
5
6
7
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