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IRF7350 Datasheet

  • IRF7350

  • Power MOSFET(Vdss=+-100V)

  • 16頁

  • IRF

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PD - 94226B
IRF7350
HEXFET
廬
Power MOSFET
l
l
l
l
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape and Reel
S1
G1
S2
G2
N - C H A N N EL M O S FE T
1
8
2
7
D1
D1
N-Ch
V
DSS
100V
P-Ch
-100V
3
6
D2
D2
4
5
P -C H A N N E L M O S F E T
R
DS(on)
0.21鈩?/div>
0.48鈩?/div>
T op V iew
Description
These dual N and P channel HEXFET
廬
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
廬
power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable
device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety
of power applications. With these improvements, multiple devices can be
used in an application with dramatically reduced board space. The package
is designed for vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
E
AS
V
GS
dv/dt
T
J,
T
STG
Drain-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
聞
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
Max.
N-Channel
100
2.1
1.7
8.4
2.0
0.016
35
鹵 20
4.0
-55 to + 150
51
鹵 20
4.3
P-Channel
-100
-1.5
-1.2
-6.0
Units
A
W
W/擄C
mJ
V
V/ns
擄C
Thermal Resistance
Symbol
R
胃JL
R
胃JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
聝
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
20
62.5
Units
擄C/W
www.irf.com
1
08/09/01

IRF7350相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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