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IRF7335D1 Datasheet

  • IRF7335D1

  • Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE

  • 12頁(yè)

  • IRF

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PD- 94546
IRF7335D1
鈥?Co-Pack Dual N-channel HEXFET
餂?/div>
Power MOSFET
and Schottky Diode
鈥?Ideal for Synchronous Buck DC-DC
Converters Up to 11A Peak Output
鈥?Low Conduction Losses
鈥?Low Switching Losses
鈥?Low Vf Schottky Rectifier
Dual FETKY聶
Co-Packaged Dual MOSFET Plus Schottky Diode
Device Ratings (Typ.Values)
Q1
Q2
and Schottky
D1
D1
G1
G2
S2
S2
S2
1
2
3
4
5
6
7
Q2
Q1
14
13
12
11
10
9
8
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
S1, D2
R
DS
(on)
Q
G
Q
sw
V
SD
13.4 m鈩?/div>
13 nC
5.5 nC
1.0V
9.6 m鈩?/div>
18 nC
6.4 nC
0.43V
Description
The FETKY
鈩?/div>
family of Co-Pack HEXFET
餂?/div>
MOSFETs and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and power management applications. Advanced
HEXFET
餂?/div>
MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-14 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple die capability making it ideal in a variety of power applications. With these improvements multiple
devices can be used in an application with dramatically reduced board space. Internal connections enable
easier board layout design with reduced stray inductance.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
V
GS
E
AS
(6 sigma)
T
J
T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V聞
Continuous Drain Current, V
GS
@ 10V聞
Pulsed Drain Current
聛
Power Dissipation
聝
Power Dissipation聝
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
30
10
8.1
81
2.0
1.3
0.02
鹵 12
50
-55 to + 150
300 (1.6mm from case )
Units
V
A
W
W/擄C
V
mJ
擄C
Thermal Resistance
Symbol
R
胃JL
R
胃JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
聝
Typ.
Max.
20
62.5
Units
擄C/W
Notes
聛
through
聟
are on page 12
9/11/02

IRF7335D1相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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