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IRF644NS Datasheet

  • IRF644NS

  • Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)

  • 11頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 94107
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175擄C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Ease of Paralleling
l
Simple Drive Requirements
Description
l
Fifth Generation HEXFET
廬
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
IRF644N
IRF644NS
IRF644NL
HEXFET
廬
Power MOSFET
D
V
DSS
= 250V
R
DS(on)
= 240m鈩?/div>
G
S
I
D
= 14A
TO-220AB
IRF644N
D
2
Pak
IRF644NS
TO-262
IRF644NL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current
聛
Repetitive Avalanche Energy
聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
14
9.9
56
150
1.0
鹵 20
180
聠
8.4
15
7.9
-55 to + 175
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
www.irf.com
1
3/15/01

IRF644NS 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 250V

  • 14A

  • 240 毫歐 @ 8.4A，10V

  • 4V @ 250µA

  • 54nC @ 10V

  • 1060pF @ 25V

  • 150W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D2PAK

  • 管件

  • *IRF644NS

IRF644NS相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
    ETC
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRONICS
  • 英文版
    Power MOSFET
    TRSYS
  • 英文版
    5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRON...

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