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IRF640STRL Datasheet

  • IRF640STRL

  • TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) |...

  • 10頁(yè)

  • ETC

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PD -90902B
IRF640S/L
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
Surface Mount (IRF640S)
Low-profile through-hole (IRF640L)
Available in Tape & Reel (IRF640S)
Dynamic dv/dt Rating
150擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 200V
R
DS(on)
= 0.18鈩?/div>
G
S
I
D
= 18A
Description
Third Generation HEXFETs from International Rectifier provide
the designer with the best combinations of fast switching ,
ruggedized device design, low on-resistance and cost-
effectiveness.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
2
Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.The through-hole version (IRF640L) is
available for low-profile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
18
11
72
3.1
130
1.0
鹵 20
580
18
13
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.0
40
Units
擄C/W
www.irf.com
1
7/20/99
Powered by ICminer.com Electronic-Library Service CopyRight 2003

IRF640STRL 產(chǎn)品屬性

  • IRF640S, LPBF

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 200V

  • 18A

  • 180 毫歐 @ 11A，10V

  • 4V @ 250µA

  • 70nC @ 10V

  • 1300pF @ 25V

  • 130W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線(xiàn)+接片），TO-263AB

  • D2PAK

  • 帶卷 (TR)

IRF640STRL相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠(chǎng)商
    下載
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 3.5A, 150-200V
    FAIRCHILD ...
  • 英文版
    2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
    ETC
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD
  • 英文版
    5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRONICS
  • 英文版
    Power MOSFET
    TRSYS
  • 英文版
    5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 7A, 150-200V
    FAIRCHILD ...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
    STMICROELECTRON...

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