PD - 95862
SMPS MOSFET
Applications
l
Reset Switch for Active Clamp
Reset DC-DC converters
IRF6218
HEXFET
廬
Power MOSFET
-150V 150m
:
@V
GS
= -10V
V
DSS
R
DS(on)
max
I
D
-27A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
D
G
S
TO-220AB
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
-150
鹵 20
-27
-19
-110
250
1.6
8.2
-55 to + 175
Units
V
A
c
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
W
W/擄C
V/ns
擄C
h
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf鈥n (1.1N鈥)
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
g
Typ.
Max.
0.61
鈥撯€撯€?/div>
62
Units
擄C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
g
g
鈥撯€撯€?/div>
0.50
鈥撯€撯€?/div>
Notes
聛
through
聞
are on page 7
www.irf.com
1
04/22/04
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